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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF7205 датащи(PDF) 2 Page - International Rectifier |
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IRF7205 датащи(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRF7205 Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA ∆V (BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.024 ––– V/°C Reference to 25°C, ID = -1mA ––– ––– 0.070 VGS = -10V, ID = -4.6A ––– ––– 0.130 VGS = -4.5V, ID = -2.0A VGS(th) Gate Threshold Voltage -1.0 ––– -3.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance ––– 6.6 ––– S VDS = -15V, ID = -4.6A ––– ––– -1.0 VDS = -24V, VGS = 0V ––– ––– -5.0 VDS = -15V, VGS = 0V, TJ = 70 °C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V Qg Total Gate Charge ––– 27 40 ID = -4.6A Qgs Gate-to-Source Charge ––– 5.2 ––– nC VDS = -15V Qgd Gate-to-Drain ("Miller") Charge ––– 7.5 ––– VGS = -10V td(on) Turn-On Delay Time ––– 14 30 VDD = -15V tr Rise Time ––– 21 60 ID = -1.0A td(off) Turn-Off Delay Time ––– 97 150 RG = 6.0 Ω tf Fall Time ––– 71 100 RD = 10Ω Between lead,6mm(0.25in.) from package and center of die contact Ciss Input Capacitance ––– 870 ––– VGS = 0V Coss Output Capacitance ––– 720 ––– pF VDS = -10V Crss Reverse Transfer Capacitance ––– 220 ––– ƒ = 1.0MHz Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.25A, VGS = 0V trr Reverse Recovery Time ––– 70 100 ns TJ = 25°C, IF = -4.6A Qrr Reverse RecoveryCharge ––– 100 180 nC di/dt = 100A/µs ton Forward Turn-On Time Source-Drain Ratings and Characteristics Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ––– ––– -15 ––– ––– -2.5 A IGSS IDSS Drain-to-Source Leakage Current LS Internal Source Inductance ––– 4.0 ––– LD Internal Drain Inductance ––– 2.5 ––– nH ns nA µA Ω RDS(ON) Static Drain-to-Source On-Resistance Notes: Repetitive rating; pulse width limited by max. junction temperature. ISD ≤ -4.6A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Surface mounted on FR-4 board, t ≤ 10sec. S D G S D G |
Аналогичный номер детали - IRF7205 |
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Аналогичное описание - IRF7205 |
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