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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BC546 датащи(PDF) 1 Page - First Components International |
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BC546 датащи(HTML) 1 Page - First Components International |
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1 / 2 page  NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T a=25°C unless otherwise noted Electrical Characteristics T a=25°C unless otherwise noted hFE Classification Symbol Parameter Value Units VCBO Collector-Base Voltage : BC546 : BC547 : BC548 80 50 30 V V V VCEO Collector-Emitter Voltage : BC546 : BC547 : BC548 65 45 30 V V V VEBO Emitter-Base Voltage : BC546/547 : BC548 6 5 V V IC Collector Current (DC) 100 mA PC Collector Dissipation 500 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB=30V, IE=0 15 nA hFE DC Current Gain VCE=5V, IC=2mA 110 800 VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA IC=100mA, IB=5mA 90 200 250 600 mV mV VBE (sat) Base-Emitter Saturation Voltage IC=10mA, IB=0.5mA IC=100mA, IB=5mA 700 mV mV VBE (on) Base-Emitter On Voltage VCE=5V, IC=2mA VCE=5V, IC=10mA 580 660 700 720 mV mV fT Current Gain Bandwidth Product VCE=5V, IC=10mA, f=100MHz 150 300 MHz Cob Output Capacitance VCB=10V, IE=0, f=1MHz 3.5 6 pF Cib Input Capacitance VEB=0.5V, IC=0, f=1MHz 9 pF NF Noise Figure : BC546/547/548 : BC549/550 : BC549 : BC550 VCE=5V, IC=200µA f=1KHz, RG=2KΩ VCE=5V, IC=200µA RG=2KΩ, f=30~15000MHz 2 1.2 1.4 1.4 10 4 4 3 dB dB dB dB Classification A B C hFE 110 ~ 220 200 ~ 450 420 ~ 800 Description of TO-92 NPN Amplifier Transistor • High Voltage: BC546,547,548 VCEO=65V, 45V, 30V • Power dissipation Pcm: 0.625W(Ta=25C) • Collector current :Icm:0.1A • Collector-base voltage:V(BR)CBO:BC546:80V,BC547:50V,BC548:30V • Operating and storage junction temperature range:Tj, Tstg: -55 ~ 150C Ic=100uA, IE=0 Ic=1mA, IB=0 IE=10uA, Ic=0 BC546/547/548 BC546 Series NPN Amplifier Transistor |
Аналогичный номер детали - BC546 |
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Аналогичное описание - BC546 |
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