2SA1700 datasheet(2/6 Pages) FOSHAN

номер детали	2SA1700

подробное описание детали	Silicon PNP transistor in a TO-252 Plastic Package.

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производитель	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

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2 / 6 page

2SA1700

Rev.E May.-2016

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

-400

V

Collector to Emitter Voltage

VCEO

-400

V

Emitter to Base Voltage

VEBO

-5.0

V

Collector Current - Continuous

IC

-200

mA

Collector Current – Continuous(Pulse)

ICP

-400

mA

Collector Power Dissipation

PC

1.0

W

Collector Power Dissipation

PC(Tc=25℃)

10

W

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Base Breakdown

Voltage

VCBO

IC=-10μA

IE=0

-400

V

Collector to Emitter Breakdown

Voltage

VCEO

IC=-1.0mA

RBE=∞

-400

V

Emitter to Base Breakdown Voltage

VEBO

IE=-10μA

IC=0

-5.0

V

Collector Cut-Off Current

ICBO

VCB=-300V

IE=0

-0.1

μA

Emitter Cut-Off Current

IEBO

VEB=-4.0V

IC=0

-0.1

μA

DC Current Gain

hFE

VCE=-10V

IC=-50mA

60

200

Collector to Emitter Saturation

Voltage

VCE(sat) IC=-50mA

IB=-5.0mA

-0.8

V

Base to Emitter Saturation Voltage

VBE(sat) IC=-50mA

IB=-5.0mA

-1.0

V

Transition Frequency

fT

VCE=-30V

IC=-10mA

70

MHz

Collector output capacitance

Cob

VCB=-30V

f=1.0MHz

5.0

pF

Reverse Transfer Capacitance

Cre

VCB=-30V

f=1.0MHz

4.0

pF

Turn-On Time

ton

10IB1=-10IB2=IC=50mA

RL=3KΩ

RB=200Ω

at IC=50mA

0.25

μs

Turn-Off Time

toff

5.0

μs

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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Sanyo Semicon Device	2SA1700	78Kb / 3P	High-Voltage Driver Applications
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