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MTB100N11RKJ3-0-T3-G датащи(PDF) 2 Page - Cystech Electonics Corp.

номер детали MTB100N11RKJ3-0-T3-G
подробное описание детали  N -Channel Enhancement Mode Power MOSFET
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производитель  CYSTEKEC [Cystech Electonics Corp.]
домашняя страница  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB100N11RKJ3-0-T3-G датащи(HTML) 2 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C059J3
Issued Date : 2017.07.04
Revised Date : 2017.07.05
Page No. : 2/9
MTB100N11RKJ3
CYStek Product Specification
Absolute Maximum Ratings (TC=25
°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
VDS
110
Gate-Source Voltage
VGS
±
20
V
Continuous Drain Current @ TC=25
°C, VGS=10V
10
Continuous Drain Current @ TC=100
°C, VGS=10V
ID
6.3
Pulsed Drain Current
*1
IDM
20
Avalanche Current
IAS
10
A
Avalanche Energy @ L=0.5mH, ID=10A, VDD=50V
*3
EAS
25
Repetitive Avalanche Energy @ L=0.05mH
*2
EAR
3
mJ
Total Power Dissipation @TC=25℃
30
Total Power Dissipation @TC=100℃
PD
12
W
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
°C
Note : *1
. Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
*3. 100% tested by L=0.1mH, IAS=10A, VGS=10V, VDD=25V
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
RθJC
4.1
50 (Note)
Thermal Resistance, Junction-to-ambient, max
RθJA
110
°C/W
Note : When the device is mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The value in any given
application depends on the user’s specific board design.
Characteristics (Tc=25
°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
110
-
-
VGS=0V, ID=250μA
VGS(th)
1
-
2.5
V
VDS =VGS, ID=250μA
IGSS
-
-
±
10
VGS=±16V, VDS=0V
-
-
1
VDS =90V, VGS =0V
IDSS
-
-
25
μA
VDS =90V, VGS =0V, TJ=125
°C
-
108
140
VGS =10V, ID=8A
RDS(ON) *1
-
123
165
VGS =4.5V, ID=6A
GFS *1
-
6
-
S
VDS =10V, ID=5A
Dynamic
Qg *1, 2
-
7.8
-
Qgs *1, 2
-
1.6
-
Qgd *1, 2
-
1.7
-
nC
ID=8A, VDS=80V, VGS=10V


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