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STN444DN датащи(PDF) 1 Page - Stanson Technology |
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STN444DN датащи(HTML) 1 Page - Stanson Technology |
1 / 8 page STN444DN N Channel Enhancement Mode MOSFET 100A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STN444DN 2016 V1 DESCRIPTION STN444DN uses Trench MOSFET technology that is uniquely optimized to provide the most efficient nigh frequency switching performance. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. PIN CONFIGURATION PowerPAK 5x6L(1212-8) Y:Year Code A:Date Code B:Package Code C:Wafer Code FEATURE l 30V/30A, RDS(ON) = 2.6mΩ(Typ.) @VGS = 10V l 30V/15A, RDS(ON) = 3.4mΩ @VGS = 4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l PowerPAK 5x6L(1212-8) package design D D D D S S S G |
Аналогичный номер детали - STN444DN |
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Аналогичное описание - STN444DN |
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