TPC8106-H

2002-02-06

1

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII)

TPC8106−H

High Speed and High Efficiency DC−DC Converters

Lithium Ion Battery Applications

Notebook PC Applications

Portable Equipment Applications

Small footprint due to small and thin package

High speed switching

Small gate charge

: Qg = 52 nC (typ.)

Low drain−source ON resistance

Characteristics

Symbol

Rating

Unit

Drain-source voltage

−30

V

−30

V

Gate-source voltage

±20

V

DC

(Note 1)

−10

Drain current

Pulse (Note 1)

−40

A

Drain power dissipation

(t = 10 s)

(Note 2a)

2.4

W

Drain power dissipation

(t = 10 s)

(Note 2b)

1.0

W

Single pulse avalanche energy

(Note 3)

130

mJ

Avalanche current

−10

A

Repetitive avalanche energy

(Note 2a) (Note 4)

0.24

mJ

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the

next page.

This transistor is an electrostatic sensitive device. Please handle with

caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-6J1B

Weight: 0.080 g (typ.)

Circuit Configuration