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TPIC5401 датащи(PDF) 3 Page - Texas Instruments |
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TPIC5401 датащи(HTML) 3 Page - Texas Instruments |
3 / 12 page TPIC5401 H-BRIDGE GATE-PROTECTED POWER DMOS ARRAY SLIS024A – DECEMBER 1993 – REVISED MARCH 1994 3 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 electrical characteristics, TC = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)DSX Drain-to-source breakdown voltage ID = 250 µA, VGS = 0 60 V VGS(th) Gate-to-source threshold voltage ID = 1 mA, See Figure 5 VDS = VGS, 1.5 1.85 2.2 V V(BR)GS Gate-to-source breakdown voltage IGS = 250 µA 18 V V(BR)SG Source-to-gate breakdown voltage ISG = 250 µA 9 V V(BR) Reverse drain-to-GND breakdown voltage (across D1, D2) Drain-to-GND current = 250 µA 100 V VDS(on) Drain-to-source on-state voltage ID = 2 A, See Notes 2 and 3 VGS = 10 V, 0.6 0.7 V VF(SD) Forward on-state voltage, source-to-drain IS = 2 A, VGS = 0 (Z1, Z2, Z3, Z4), See Notes 2 and 3 and Figure 12 1 1.2 V VF Forward on-state voltage, GND-to-drain ID = 2 A (D1, D2), See Notes 2 and 3 7.5 V IDSS Zero gate voltage drain current VDS = 48 V, TC = 25°C 0.05 1 µA IDSS Zero-gate-voltage drain current DS , VGS = 0 TC = 125°C 0.5 10 µA IGSSF Forward-gate current, drain short circuited to source VGS = 15 V, VDS = 0 20 200 nA IGSSR Reverse-gate current, drain short circuited to source VSG = 5 V, VDS = 0 10 100 nA Ilk Leakage current drain to GND VDGND =48V TC = 25°C 0.05 1 µA Ilkg Leakage current, drain-to-GND VDGND = 48 V TC = 125°C 0.5 10 µA rDS( ) Static drain to source on state resistance VGS = 10 V, ID = 2 A, TC = 25°C 0.3 0.35 Ω rDS(on) Static drain-to-source on-state resistance D , See Notes 2 and 3 and Figures 6 and 7 TC = 125°C 0.47 0.5 Ω gfs Forward transconductance VDS = 15 V, ID = 1 A, See Notes 2 and 3 and Figure 9 1.6 1.9 S Ciss Short-circuit input capacitance, common source 220 275 Coss Short-circuit output capacitance, common source VDS = 25 V, VGS = 0, 120 150 pF Crss Short-circuit reverse-transfer capacitance, common source f = 1 MHz, See Figure 11 100 125 F NOTES: 2. Technique should limit TJ – TC to 10°C maximum. 3. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts. source-to-drain and GND-to-drain diode characteristics, TC = 25°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Z1 and Z3 120 trr Reverse-recovery time Z2 and Z4 280 ns IS = 1 A, VGS =0 VDS = 48 V, di/dt = 100 A/ µs D1 and D2 260 VGS = 0, See Figures 1 and 14 di/dt = 100 A/ µs, Z1 and Z3 0.12 QRR Total diode charge See Figures 1 and 14 Z2 and Z4 0.9 µC D1 and D2 2.2 |
Аналогичный номер детали - TPIC5401 |
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Аналогичное описание - TPIC5401 |
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