поискавой системы для электроныых деталей |
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2SD1815 датащи(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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2SD1815 датащи(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
1 / 3 page JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors 2SD1815 TRANSISTOR (NPN) FEATURES Low Collector-to-Emitter Saturation Voltage Excllent Linearity of hFE High fT Fast Switching Time MAXIMUM RATINGS ( Ta=2 5 unless otherwise note) Symbol Parameter Value Unit VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 to +150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10μA, IE=0 120 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 100 V Emitter-base breakdown voltage V(BR)EBO IE=10μA, IC=0 6 V Collector cut-off current ICBO VCB=100V, IE=0 1 μA Emitter cut-off current IEBO VEB=4V, IC=0 1 μA hFE(1) VCE=5V, IC=500mA 70 400 DC current gain hFE(2) VCE=5V, IC=2A 40 Collector-emitter saturation voltage VCE(sat) IC=1.5A, IB=150mA 0.4 V Base -emitter saturation voltage VBE(sat) IC=1.5A, IB=150mA 1.2 V Transition frequency fT VCE=10V, IC=500mA 180 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 25 pF Turn-on time ton 100 n s Storage time tS 900 n s Fall time tf VCC=50V,IC=1.5A, IB1=-IB2=-0.15A 50 n s CLASSIFICATION OF hFE(1) Rank Q R S T Range 70-140 100-200 140-280 200-400 TO-251-3L 1. BASE 2. COLLECTOR 3. EMITTER ℃ www.cj-elec.com 1 D,Nov,2014 |
Аналогичный номер детали - 2SD1815 |
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Аналогичное описание - 2SD1815 |
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