2SD1815 datasheet(1/3 Pages) JIANGSU

номер детали	2SD1815

подробное описание детали	TO-251-3L Plastic-Encapsulate Transistors

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производитель	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

домашняя страница	http://www.cj-elec.com/en/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-251-3L Plastic-Encapsulate Transistors

2SD1815

TRANSISTOR (NPN)

FEATURES

Low

Collector-to-Emitter Saturation Voltage

Excllent

Linearity of hFE

High fT

Fast

Switching Time

MAXIMUM RATINGS (

Ta=2

5 unless otherwise note)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

120

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current -Continuous

3

A

PC

Collector Power Dissipation

1

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55 to +150

℃

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=10μA, IE=0

120

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA, IB=0

100

V

Emitter-base breakdown voltage

V(BR)EBO

IE=10μA, IC=0

6

V

Collector cut-off current

ICBO

VCB=100V, IE=0

1

μA

Emitter cut-off current

IEBO

VEB=4V, IC=0

1

μA

hFE(1)

VCE=5V, IC=500mA

70

400

DC current gain

hFE(2)

VCE=5V, IC=2A

40

Collector-emitter saturation voltage

VCE(sat)

IC=1.5A, IB=150mA

0.4

V

Base -emitter saturation voltage

VBE(sat)

IC=1.5A, IB=150mA

1.2

V

Transition frequency

fT

VCE=10V, IC=500mA

180

MHz

Collector output capacitance

Cob

VCB=10V, IE=0, f=1MHz

25

pF

Turn-on time

ton

100

n

s

Storage time

tS

900

n

s

Fall time

tf

VCC=50V,IC=1.5A, IB1=-IB2=-0.15A

50

n

s

CLASSIFICATION OF

hFE(1)

Rank

Q

R

S

T

Range

70-140

100-200

140-280

200-400

TO-251-3L

1. BASE

2. COLLECTOR

3. EMITTER

℃

www.cj-elec.com

1

D,Nov,2014

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