BC369 datasheet(1/3 Pages) JIANGSU

номер детали	BC369

подробное описание детали	TO-92 Plastic-Encapsulate Transistors

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производитель	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

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TO – 92

1.EMITTER

2.COLLECTOR

3.BASE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

BC369

TRANSISTOR (PNP)

FEATURES

High Current

Low Voltage

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC= -0.1mA,IE=0

-25

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=-10mA,IB=0

-20

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-0.01mA,IC=0

-5

V

Collector cut-off current

ICBO

VCB=-25V,IE=0

-10

μA

Emitter cut-off current

IEBO

VEB=-5V,IC=0

-10

μA

hFE(1)

VCE=-1V, IC=-0.5A

85

375

hFE(2)

VCE=-10V, IC=-5mA

50

DC current gain

hFE(3)

VCE=-1V, IC=-1A

60

Collector-emitter saturation voltage

VCE(sat)

IC=-1A,IB=-0.1A

-0.5

V

Base-emitter voltage

VBE

IC=-1A, VCE=-1V

-1

V

Transition frequency

fT

VCE=-5V,IC=-10mA,f=35MHz

65

MHz

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-25

V

VCEO

Collector-Emitter Voltage

-20

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-1

A

PC

Collector Power Dissipation

0.625

W

RθJA

Thermal Resistance From Junction To Ambient

200

℃/W

Tj

Junction temperature

150

℃

Tstg

storage temperature

-55~+150

℃

www.cj-elec.com

1

C,Dec,2015

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