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AM2304N датащи(PDF) 1 Page - Analog Power |
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AM2304N датащи(HTML) 1 Page - Analog Power |
1 / 5 page Analog Power AM2304N N-Channel 30-V (D-S) MOSFET VDS (V) ID (A) 8.5 7.0 Symbol Limit Units VDS 30 VGS ±20 TA=25°C 8.5 TA=70°C 6.7 IDM 40 IS 1.9 A TA=25°C 1.3 TA=70°C 0.8 TJ, Tstg -55 to 150 °C Symbol Maximum Units 100 166 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Pulsed Drain Current b Continuous Source Current (Diode Conduction) a RθJA ID A PD W THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage Maximum Junction-to-Ambient a Continuous Drain Current a Power Dissipation a t <= 10 sec Steady State Gate-Source Voltage PRODUCT SUMMARY 30 rDS(on) (mΩ) 12 @ VGS = 10V 18 @ VGS = 4.5V Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Power Routing • Li Ion Battery Packs • Level Shifting and Driver Circuits © Preliminary 1 Publication Order Number: DS_AM2304N_1A |
Аналогичный номер детали - AM2304N |
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Аналогичное описание - AM2304N |
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