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SID9971-S датащи(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

номер детали SID9971-S
подробное описание детали  N-Ch Enhancement Mode Power MOSFET
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производитель  SECOS [SeCoS Halbleitertechnologie GmbH]
домашняя страница  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SID9971-S датащи(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
SID9971-S
25A, 60V, RDS(ON) 36m
N-Ch Enhancement Mode Power MOSFET
24-Mar-2017 Rev. B
Page 2 of 4
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS (T
J=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
60
-
-
V
VGS=0V, ID=250µA
Gate-Threshold Voltage
VGS(th)
1
-
2.5
V
VDS=VGS, ID=250µA
-
-
1
VDS=48V, VGS=0V, TJ=25°C
Drain-Source Leakage Current
IDSS
-
-
25
µA
VDS=48V, VGS=0V, TJ=125°C
Gate-Source Leakage Current
IGSS
-
-
±100
nA
VGS= ±20V, VDS= 0V
Forward Transfer conductance
gfs
-
10
-
S
VDS=10V, ID=18A
-
27
36
VGS=10V, ID=18A
Static Drain-Source On-Resistance
3
RDS(ON)
-
31
45
m
VGS=4.5V, ID=12A
Total Gate Charge @VGS=4.5V
Qg
-
12.5
-
Total Gate Charge
Qg
-
18
-
Gate-Source Charge
Qgs
-
5
-
Gate-Drain (“Miller”) Charge
Qgd
-
6
-
nC
VDS=48V
VGS=10V
ID=18A
Turn-on Delay Time
Td(on)
-
7
-
Turn-on Rise Time
Tr
-
9
-
Turn-off Delay Time
Td(off)
-
23
-
Turn-off Fall Time
Tf
-
6
-
nS
VDD=30V
ID=18A
VGS=10V
RG=3.3
RL=1.67
Input Capacitance
Ciss
-
1572
-
Output Capacitance
Coss
-
58
-
Reverse Transfer Capacitance
Crss
-
39
-
pF
VDS=30V
VGS=0V
f=1MHz
Source-Drain Diode
Diode Forward Voltage
3
VSD
-
-
1.2
V
IS=25A, VGS=0
Continuous Source Current
1
IS
-
-
25
Pulsed Source Current
2
ISM
-
-
50
A
Reverse Recovery Time
Trr
-
37
-
nS
Reverse Recovery Charge
Qrr
-
38
-
nC
IS=18A, dl/dt=100A/µs
TJ=25°C
Notes:
1.
The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.
The power dissipation is limited by 150°C junc tion temperature
3.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%


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