поискавой системы для электроныых деталей |
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SID9971-S датащи(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SID9971-S датащи(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 4 page Elektronische Bauelemente SID9971-S 25A, 60V, RDS(ON) 36m N-Ch Enhancement Mode Power MOSFET 24-Mar-2017 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T J=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Drain-Source Breakdown Voltage BVDSS 60 - - V VGS=0V, ID=250µA Gate-Threshold Voltage VGS(th) 1 - 2.5 V VDS=VGS, ID=250µA - - 1 VDS=48V, VGS=0V, TJ=25°C Drain-Source Leakage Current IDSS - - 25 µA VDS=48V, VGS=0V, TJ=125°C Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±20V, VDS= 0V Forward Transfer conductance gfs - 10 - S VDS=10V, ID=18A - 27 36 VGS=10V, ID=18A Static Drain-Source On-Resistance 3 RDS(ON) - 31 45 m VGS=4.5V, ID=12A Total Gate Charge @VGS=4.5V Qg - 12.5 - Total Gate Charge Qg - 18 - Gate-Source Charge Qgs - 5 - Gate-Drain (“Miller”) Charge Qgd - 6 - nC VDS=48V VGS=10V ID=18A Turn-on Delay Time Td(on) - 7 - Turn-on Rise Time Tr - 9 - Turn-off Delay Time Td(off) - 23 - Turn-off Fall Time Tf - 6 - nS VDD=30V ID=18A VGS=10V RG=3.3 RL=1.67 Input Capacitance Ciss - 1572 - Output Capacitance Coss - 58 - Reverse Transfer Capacitance Crss - 39 - pF VDS=30V VGS=0V f=1MHz Source-Drain Diode Diode Forward Voltage 3 VSD - - 1.2 V IS=25A, VGS=0 Continuous Source Current 1 IS - - 25 Pulsed Source Current 2 ISM - - 50 A Reverse Recovery Time Trr - 37 - nS Reverse Recovery Charge Qrr - 38 - nC IS=18A, dl/dt=100A/µs TJ=25°C Notes: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2. The power dissipation is limited by 150°C junc tion temperature 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% |
Аналогичный номер детали - SID9971-S |
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Аналогичное описание - SID9971-S |
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