поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

TSHG5510 датащи(PDF) 1 Page - Vishay Siliconix

номер детали TSHG5510
подробное описание детали  High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
Download  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  VISHAY [Vishay Siliconix]
домашняя страница  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TSHG5510 датащи(HTML) 1 Page - Vishay Siliconix

  TSHG5510_11 Datasheet HTML 1Page - Vishay Siliconix TSHG5510_11 Datasheet HTML 2Page - Vishay Siliconix TSHG5510_11 Datasheet HTML 3Page - Vishay Siliconix TSHG5510_11 Datasheet HTML 4Page - Vishay Siliconix TSHG5510_11 Datasheet HTML 5Page - Vishay Siliconix  
Zoom Inzoom in Zoom Outzoom out
 1 / 5 page
background image
TSHG5510
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 23-Aug-11
1
Document Number: 81887
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Speed Infrared Emitting Diode, 830 nm,
GaAlAs Double Hetero
DESCRIPTION
TSHG5510 is an infrared, 830 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength:
λp = 830 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity:
ϕ = ± 38°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 24 MHz
• Good spectral matching to Si photodetectors
• Compliant
to
RoHS
Directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
APPLICATIONS
• Infrared radiation source for operation with CMOS
cameras (illumination)
• High speed IR data transmission
Note
• Test conditions see table “Basic Characteristics“
Note
• MOQ: minimum order quantity
21061
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λp (nm)
tr (ns)
TSHG5510
32
± 38
830
15
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
TSHG5510
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage
VR
5V
Forward current
IF
100
mA
Peak forward current
tp/T = 0.5, tp = 100 μs
IFM
200
mA
Surge forward current
tp = 100 μs
IFSM
1A
Power dissipation
PV
180
mW
Junction temperature
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 85
°C
Storage temperature range
Tstg
- 40 to + 100
°C
Soldering temperature
t
≤ 5 s, 2 mm from case
Tsd
260
°C
Thermal resistance junction/ambient
J-STD-051, leads 7 mm soldered on PCB
RthJA
230
K/W


Аналогичный номер детали - TSHG5510_11

производительномер деталидатащиподробное описание детали
logo
Vishay Siliconix
TSHG5510 VISHAY-TSHG5510_V01 Datasheet
93Kb / 5P
   High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
01-Jan-2022
TSHG5510 VISHAY-TSHG5510_V02 Datasheet
92Kb / 5P
   High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
01-Jan-2023
More results

Аналогичное описание - TSHG5510_11

производительномер деталидатащиподробное описание детали
logo
Vishay Siliconix
TSHG8200 VISHAY-TSHG8200_V01 Datasheet
113Kb / 5P
   High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
01-Jan-2022
TSHG5510 VISHAY-TSHG5510_V02 Datasheet
92Kb / 5P
   High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
01-Jan-2023
VSMG2720 VISHAY-VSMG2720_13 Datasheet
133Kb / 6P
   High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
Rev. 1.3, 24-Sep-13
VSMG2720 VISHAY-VSMG2720_V01 Datasheet
144Kb / 6P
   High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
01-Jan-2022
TSHG8400 VISHAY-TSHG8400_V01 Datasheet
104Kb / 5P
   High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
01-Jan-2022
VSMG2700 VISHAY-VSMG2700_09 Datasheet
137Kb / 6P
   High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
Rev. 1.3, 03-Nov-09
TSHG8200 VISHAY-TSHG8200_09 Datasheet
101Kb / 5P
   High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
Rev. 1.2, 02-Jul-09
TSHG8400 VISHAY-TSHG8400_V02 Datasheet
103Kb / 5P
   High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
01-Jan-2023
VSMG2700 VISHAY-VSMG2700_13 Datasheet
131Kb / 6P
   High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
Rev. 1.4, 24-Sep-13
TSHG5510 VISHAY-TSHG5510 Datasheet
104Kb / 5P
   High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
Rev. 1.1, 25-Jun-09
More results


Html Pages

1 2 3 4 5


датащи скачать

Go To PDF Page


ссылки URL




Конфиденциальность
ALLDATASHEETRU.COM
Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com