поискавой системы для электроныых деталей |
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SN74AUP1G125YZP датащи(PDF) 4 Page - Texas Instruments |
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SN74AUP1G125YZP датащи(HTML) 4 Page - Texas Instruments |
4 / 46 page 4 SN74AUP1G125 SCES595N – JULY 2004 – REVISED JULY 2017 www.ti.com Product Folder Links: SN74AUP1G125 Submit Documentation Feedback Copyright © 2004–2017, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) The input negative-voltage and output voltage ratings may be exceeded if the input and output current ratings are observed. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT VCC Supply voltage –0.5 4.6 V VI Input voltage(2) –0.5 4.6 V VO Voltage applied to any output in the high-impedance or power-off state(2) –0.5 4.6 V VO Output voltage in the high or low state(2) –0.5 VCC + 0.5 V IIK Input clamp current VI < 0 –50 mA IOK Output clamp current VO < 0 –50 mA IO Continuous output current ±20 mA Continuous current through VCC or GND ±50 mA TJ Junction temperature 150 °C Tstg Storage temperature –65 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) 2000 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) 1000 |
Аналогичный номер детали - SN74AUP1G125YZP |
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Аналогичное описание - SN74AUP1G125YZP |
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