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FSB50450B датащи(PDF) 3 Page - ON Semiconductor |
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FSB50450B датащи(HTML) 3 Page - ON Semiconductor |
3 / 13 page Semiconductor Components Industries, LLC, 2017 www.fairchildsemi.com FSB50450B / FSB50450BS . Rev. 1.2 www.onsemi.com 2 Absolute Maximum Ratings Inverter Part (each MOSFET unless otherwise specified.) Control Part (each HVIC unless otherwise specified.) Bootstrap Diode Part (each bootstrap diode unless otherwise specified.) Thermal Resistance Total System Notes: 1. For the measurement point of case temperature TC, please refer to Figure 4. 2. Marking “ * “ is calculation value or design factor. Symbol Parameter Conditions Rating Unit VDSS Drain-Source Voltage of Each MOSFET 500 V *ID 25 Each MOSFET Drain Current, Continuous TC = 25°C 2.2 A *ID 80 Each MOSFET Drain Current, Continuous TC = 80°C 1.4 A *IDP Each MOSFET Drain Current, Peak TC = 25°C, PW < 100 μs5.0 A *IDRMS Each MOSFET Drain Current, Rms TC = 80°C, FPWM < 20 kHz 1.0 Arms Symbol Parameter Conditions Rating Unit VDD Control Supply Voltage Applied between VDD and COM 20 V VBS High-side Bias Voltage Applied between VB and VS 20 V VIN Input Signal Voltage Applied between VIN and COM -0.3 ~ VDD + 0.3 V Symbol Parameter Conditions Rating Unit VRRMB Maximum Repetitive Reverse Voltage 500 V * IFB Forward Current TC = 25°C 0.5 A * IFPB Forward Current (Peak) TC = 25°C, Under 1ms Pulse Width 2.0 A Symbol Parameter Conditions Rating Unit Rth(j-c)Q Junction to Case Thermal Resistance ( Note1 ) Inverter MOSFET part, (Per Module) 2.3 °C/W Symbol Parameter Conditions Rating Unit TJ Operating Junction Temperature -40 ~ 150 °C TSTG Storage Temperature -40 ~ 125 °C VISO Isolation Voltage 60 Hz, Sinusoidal, 1 Minute, Con- nect Pins to Heat Sink Plate 1500 Vrms |
Аналогичный номер детали - FSB50450B |
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Аналогичное описание - FSB50450B |
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