поискавой системы для электроныых деталей |
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SI4482DY-T1 датащи(PDF) 1 Page - Vishay Siliconix |
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SI4482DY-T1 датащи(HTML) 1 Page - Vishay Siliconix |
1 / 4 page Si4482DY Vishay Siliconix Document Number: 70749 S-03951—Rev. B, 26-May-03 www.vishay.com 2-1 N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.060 @ VGS = 10 V 4.6 100 0.080 @ VGS = 6 V 4.0 SO-8 SD SD SD GD 5 6 7 8 Top View 2 3 4 1 D G S N-Channel MOSFET Ordering Information: Si4482DY Si4482DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS "20 V Continuous Drain Current (TJ = 150_C)a TA = 25_C ID 4.6 Continuous Drain Current (TJ = 150_C)a TA = 70_C ID 3.7 A Pulsed Drain Current IDM 40 A Continuous Source Current (Diode Conduction)a IS 2.1 Maximum Power Dissipationa TA = 25_C PD 2.5 W Maximum Power Dissipationa TA = 70_C PD 1.6 W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit Maximum Junction-to-Ambienta RthJA 50 _C/W Notes a. Surface Mounted on FR4 Board, t v 10 sec. |
Аналогичный номер детали - SI4482DY-T1 |
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Аналогичное описание - SI4482DY-T1 |
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