MAXIMUM RATINGS (TA=25°C)

SYMBOL

CXT3904

CXT3906

UNITS

Collector-Base Voltage

VCBO

60

40

V

Collector-Emitter Voltage

VCEO

40

40

V

Emitter-Base Voltage

VEBO

6.0

5.0

V

Collector Current

IC

200

mA

Power Dissipation

PD

1.2

W

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

104

°C/W

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

CXT3904

CXT3906

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

UNITS

ICEV

VCE=30V, VEB=3.0V

50

50

nA

IBL

VCE=30V, VEB=3.0V

50

50

nA

BVCBO

IC=10µA

60

40

V

BVCEO

IC=1.0mA

40

40

V

BVEBO

IE=10µA

6.0

5.0

V

VCE(SAT)

IC=10mA, IB=1.0mA

0.20

0.25

V

VCE(SAT)

IC=50mA, IB=5.0mA

0.30

0.40

V

VBE(SAT)

IC=10mA, IB=1.0mA

0.65

0.85

0.65

0.85

V

VBE(SAT)

IC=50mA, IB=5.0mA

0.95

0.95

V

hFE

VCE=1.0V, IC=0.1mA

40

60

hFE

VCE=1.0V, IC=1.0mA

70

80

hFE

VCE=1.0V, IC=10mA

100

300

100

300

hFE

VCE=1.0V, IC=50mA

60

60

CXT3904 NPN

CXT3906 PNP

SURFACE MOUNT

COMPLEMENTARY

SILICON TRANSISTORS

SOT-89 CASE

Central

Semiconductor Corp.

TM

R6 (20-May 2004)

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CXT3904,

CXT3906 types are complementary silicon

transistors manufactured by the epitaxial planar

process, epoxy molded in a surface mount

package, designed for small signal general

purpose and switching applications.

MARKING CODE: FULL PART NUMBER